Semiconductor device with silicon-containing hard mask and method for fabricating the same
US8846540B2 · kind B2 · utility
5Cited by
0References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2012 |
| Grant date | Sep 30, 2014 |
| Priority date | — |
| Expiry date | Dec 12, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/033
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate having an etch target layer provided on the surface thereof, and a hard mask layer formed over the etch target layer and including silicon, wherein the hard mask layer includes a dual structure including a first area and a second area having a larger etch rate than the first area, in order to increase an etching selectivity of the hard mask layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.