Memory component including an ion source layer and a resistance change layer, and a memory device using the same
US8847194B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 26, 2013 |
| Grant date | Sep 30, 2014 |
| Priority date | — |
| Expiry date | Nov 26, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/56
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory component having a first electrode; a second electrode; and a memory layer between the first and second electrodes. The memory layer includes (a) on a first electrode side thereof, a high resistance layer that is composed of a plurality of layers, at least one of the plurality of layers including tellurium (Te) as the chief component among anion components, and (b) on a second electrode side thereof, an ion source layer with at least one kind of metal element and at least one kind of chalcogen element selected from the group consisting of tellurium (Te), sulfur (S) and selenium (Se). The memory component is configured to change a resistance of the high resistance layer in accordance with a voltage or current pulse stress applied between the first and second electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.