Resistive memory cell

US8847196B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Matthew N. Rocklein · Boise, US
• D. V. Nirmal Ramaswamy · Boise, US

Key dates

• Filing date: May 17, 2011
• Grant date: Sep 30, 2014
• Expiry date: Apr 2, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8836

Abstract

Semiconductor memory devices, resistive memory devices, memory cell structures, and methods of forming a resistive memory cell are provided. One example method of a resistive memory cell can include a number of dielectric regions formed between two electrodes, and a barrier dielectric region formed between each of the dielectric regions. The barrier dielectric region serves to reduce an oxygen diffusion rate associated with the dielectric regions.