Group III nitride epitaxial laminate substrate
US8847203B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 4, 2010 |
| Grant date | Sep 30, 2014 |
| Priority date | — |
| Expiry date | Nov 4, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/824
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A Group III nitride epitaxial laminate substrate comprising a substrate, a buffer and a main laminate in this order, wherein the buffer includes an initial growth layer, a first superlattice laminate and a second superlattice laminate in this order, the first superlattice laminate includes five to 20 sets of first AlN layers and second GaN layers, the first AlN layers and the second GaN layers being alternately stacked, and each one set of the first AlN layer and the second GaN layer has a thickness of less than 44 nm, the second superlattice laminate includes a plurality of sets of first layers made of an AlN material or an AlGaN material and second layers made of an AlGaN material having a different band gap from the first layers, the first and second layers being alternately stacked.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.