Method for forming a self-aligned hard mask for contact to a tunnel junction
US8847338B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 22, 2012 |
| Grant date | Sep 30, 2014 |
| Priority date | — |
| Expiry date | Dec 4, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
Abstract
A magnetic memory cell having a self-aligned hard mask for contact to a magnetic tunnel junction is provided. For example, a magnetic memory cell includes a magnetic storage element formed on a semiconductor substrate, and a hard mask that is self-aligned with the magnetic storage element. The hard mask includes a hard mask material layer formed on an upper surface of a magnetic stack in the magnetic storage element, an anti-reflective coating (ARC) layer formed on at least a portion of an upper surface of the hard mask material layer, wherein the ARC layer is selected to be removable by a wet etch, and a photoresist layer formed on at least a portion of an upper surface of the ARC layer. The selected portions of the ARC layer and photoresist layer are removed in a same processing step with wet etch techniques without interference to the magnetic stack.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.