Patent · US Active

DDR 2D Vref training

US8850155B2 · kind B2 · utility

14Cited by
3References
23Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 19, 2011
Grant dateSep 30, 2014
Priority date
Expiry dateMar 16, 2033

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C11/40
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A method is provided for performing memory operations in response to instructions to perform a double data rate (DDR) memory reference voltage training in the voltage domain by a processing device and determining a DDR memory reference voltage and a DDR memory delay time based upon the memory operation. Computer readable storage media are also provided. A circuit is provided that includes a communication interface portion coupled to a memory and to a processing device. The circuit also includes a circuit portion, coupled to the communication interface portion that has a hardware state machine or an algorithm. The state machine or algorithm provides instructions to the processing device to perform a double data rate (DDR) reference voltage training in the voltage domain.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.