Defect monitoring for resist layer
US8852673B2 · kind B2 · utility
4Cited by
1References
20Claims
0Family size
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Key dates
| Filing date | Nov 1, 2011 |
| Grant date | Oct 7, 2014 |
| Priority date | — |
| Expiry date | Mar 5, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/405
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Methods for detecting and monitoring defects in a resist material are disclosed. In an example, a method includes forming a resist layer over a substrate; developing the resist layer; washing the developed resist layer with a thinner wash solution, wherein the washing reveals any negatively charged defects in the developed resist layer; and after the washing, inspecting for the negatively charged defects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.