Magnetic random access memory with synthetic antiferromagnetic storage layers and non-pinned reference layers
US8852762B2 · kind B2 · utility
11Cited by
20References
6Claims
0Family size
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Key dates
| Filing date | Jul 31, 2012 |
| Grant date | Oct 7, 2014 |
| Priority date | — |
| Expiry date | Jul 31, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/325
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A synthetic antiferromagnetic device includes a reference layer having a first and second ruthenium layer, a magnesium oxide spacer layer disposed on the reference layer, a cobalt iron boron layer disposed on the magnesium oxide spacer layer and a third ruthenium layer disposed on the cobalt iron boron layer, the third ruthenium layer having a thickness of approximately 0 angstroms to 18 angstroms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.