Method for forming a titanium-containing layer on a substrate using an atomic layer deposition (ALD) process
US8853075B2 · kind B2 · utility
14Cited by
11References
20Claims
0Family size
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Key dates
| Filing date | Feb 13, 2009 |
| Grant date | Oct 7, 2014 |
| Priority date | — |
| Expiry date | Apr 15, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2201/30469
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods of forming titanium-containing layers on substrates are disclosed. In the disclosed methods, the vapor of a precursor compound having the formula Ti(Me5Cp)(OR)3, wherein R is selected from methyl, ethyl, or isopropyl is provided. The vapor is reacted with the substrate according to an atomic layer deposition process to form a titanium-containing complex on the surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.