Semiconductor device including trenches and method of manufacturing a semiconductor device

US8853774B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Maria Cotorogea · Taufkirchen, DE
• Hans Peter Felsl · Munich, DE
• Yvonne Gawlina · Pullach im Isartal, DE
• Francisco Javier Santos Rodriguez · Villach, AT
• Hans-Joachim Schulze · Taufkirchen, DE
• Georg Seibert · Waakirchen, DE
• Andre Rainer Stegner · Unterhaching, DE
• Wolfgang Wagner · Preetz, DE

Key dates

• Filing date: Nov 30, 2012
• Grant date: Oct 7, 2014
• Expiry date: Dec 19, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/516

Abstract

A semiconductor device includes a first transistor cell including a first gate electrode in a first trench. The semiconductor device further includes a second transistor cell including a second gate electrode in a second trench, wherein the first and second gate electrodes are electrically connected. The semiconductor device further includes a third trench between the first and second trenches, wherein the third trench extends deeper into a semiconductor body from a first side of the semiconductor body than the first and second trenches. The semiconductor device further includes a dielectric in the third trench covering a bottom side and walls of the third trench.