Use of ruthenium tetroxide as a precursor and reactant for thin film depositions

US8859047B2 · kind B2 · utility

Assignees

• L'Air Liquide, Societe Anonyme Pour l'Etude et l'Exploitation des Procedes Georges Claude · FR
• American Air Liquide, Inc. · US

Inventors

• Julien Gatineau · Ibaraki, JP
• Christian Dussarrat · Tokyo, JP

Key dates

• Filing date: Dec 22, 2010
• Grant date: Oct 14, 2014
• Expiry date: May 3, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02304
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Disclosed are atomic layer deposition methods using ruthenium-containing precursors to form ruthenium-containing films for use in the manufacture of semiconductor, photovoltaic, LCD-TFT, or flat panel type devices.