Memory cells and methods of forming memory cells
US8859329B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 23, 2014 |
| Grant date | Oct 14, 2014 |
| Priority date | — |
| Expiry date | Apr 23, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/0007
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Some embodiments include memory cells having programmable material between a pair of electrodes. The programmable material includes a material selected from the group consisting of a metal silicate with a ratio of metal to silicon within a range of from about 2 to about 6, and metal aluminate with a ratio of metal to aluminum within a range of from about 2 to about 6. Some embodiments include methods of forming memory cells. First electrode material is formed. Programmable material is formed over the first electrode material, with the programmable material including metal silicate and/or metal aluminate. Second electrode material is formed over the programmable material, and then an anneal is conducted at a temperature within a range of from about 300° C. to about 500° C. for a time of from about 1 minute to about 1 hour.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.