Enhancing adhesion of interlayer dielectric materials of semiconductor devices by suppressing silicide formation at the substrate edge

US8859398B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Tobias Letz · Dresden, DE
• Frank Feustel · Dresden, DE
• Kai Frohberg · Meißen, DE

Key dates

• Filing date: Mar 30, 2010
• Grant date: Oct 14, 2014
• Expiry date: Nov 24, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/601
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Adhesion of dielectric layer stacks to be formed after completing the basic configuration of transistor elements may be increased by avoiding the formation of a metal silicide in the edge region of the substrate. For this purpose, a dielectric protection layer may be selectively formed in the edge region prior to a corresponding pre-clean process or immediately prior to deposition of the refractory metal. Hence, non-reacted metal may be efficiently removed from the edge region without creating a non-desired metal silicide. Hence, the further processing may be continued on the basis of enhanced process conditions for forming interlayer dielectric materials.