DSA grapho-epitaxy process with etch stop material

US8859433B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Jassem A. Abdallah · Albany, US
• Matthew E. Colburn · Hopewell Junction, US
• Steven J. Holmes · Colchester, US
• Daiji Kawamura · Albany, US
• Chi-Chun Liu · Altamont, US
• Muthumanickam Sankarapandian · Niskayuna, US
• Yunpeng Yin · Guilderland, US

Key dates

• Filing date: Mar 11, 2013
• Grant date: Oct 14, 2014
• Expiry date: Apr 5, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0271
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for defining a template for directed self-assembly (DSA) materials includes forming an etch stop layer on a neutral material, forming a mask layer on the etch stop layer and forming an anti-reflection coating (ARC) on the mask layer. A resist layer is patterned on the ARC using optical lithography to form a template pattern. The ARC and the mask layer are reactive ion etched down to the etch stop layer in accordance with the template pattern to form a template structure. The ARC is removed from the mask layer and the template structure is trimmed to reduce a width of the template structure. A wet etch is performed to remove the etch stop layer to permit the neutral material to form an undamaged DSA template for DSA materials.