Thin film resistor structure
US8860181B2 · kind B2 · utility
5Cited by
59References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2012 |
| Grant date | Oct 14, 2014 |
| Priority date | — |
| Expiry date | May 21, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film resistor structure includes a substrate, a flat bottom ILD (inter layer dielectric) disposed on the substrate, a plurality of first contacts disposed in the bottom ILD, and each top surface of the first contacts is on the same level as a top surface of the bottom ILD; a flat top ILD disposed on the bottom ILD, a plurality of second contacts disposed in the top ILD, and each top surface of the second contacts is on the same level as a top surface of the top ILD, and a thin film resistor disposed between the bottom ILD and the top ILD.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.