Internal data load for non-volatile storage
US8861269B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 5, 2013 |
| Grant date | Oct 14, 2014 |
| Priority date | — |
| Expiry date | Mar 5, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5648
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Techniques are disclosed herein for performing an Internal Data Load (IDL) to sense non-volatile storage elements. Read pass voltages that are applied to the two neighbor word lines to a selected word line may be adjusted to result in a more accurate IDL. The read pass voltage for one neighbor may be increased by some delta voltage, whereas the read pass voltage for the other neighbor may be decreased by the same delta voltage. In one aspect, programming of an upper page of data into a word line that neighbors a target word line is halted to allow lower page data in the target memory cells to be read using an IDL and preserved in data latches while programming the upper page in the neighbor word completes. Preservation of the lower page data provides for a cleaner lower page when later programming the upper page into the target memory cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.