Patent · US Active

Production method for a bulk SiC single crystal with a large facet and monocrystalline SiC substrate with homogeneous resistance distribution

US8865324B2 · kind B2 · utility

7Cited by

1References

7Claims

0Family size

Assignee

SiCrystal GMBH · DE

Inventors

Thomas Straubinger · Steinfeld (Oldenburg), DE
Michael Vogel · Nuremberg, DE
Andreas Wohlfart · Erlangen, DE

Key dates

Filing date	Aug 9, 2010
Grant date	Oct 21, 2014
Priority date	—
Expiry date	Feb 8, 2032

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T428/31
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A method is used to produce a bulk SiC single crystal. A seed crystal is arranged in a crystal growth region of a growing crucible. An SiC growth gas phase is produced in the crystal growth region. The bulk SiC single crystal having a central longitudinal mid-axis grows by deposition from the SiC growth gas phase, the deposition taking place on a growth interface of the growing bulk SiC single crystal. The SiC growth gas phase is at least partially fed from an SiC source material and contains at least one dopant from the group of nitrogen, aluminum, vanadium and boron. At least in a central main growth region of the growth interface arranged about the longitudinal mid-axis, a lateral temperature gradient of at most 2 K/cm measured perpendicular to the longitudinal mid-axis is adjusted and maintained in this range. The bulk SiC single crystal has a large facet region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.