Thomas Straubinger
6Patents
1h-index
4Co-inventors
36Inventor score
Filing activity: Apr 5, 2010 → Apr 22, 2014
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8865324B2 | Production method for a bulk SiC single crystal with a large facet and monocrystalline SiC substrate with homogeneous resistance distribution | Emerging Cross-Sectional Technologies | 7 | Active |
| US8747982B2 | Production method for an SiC volume monocrystal with a homogeneous lattice plane course and a monocrystalline SiC substrate with a homogeneous lattice plane course | Emerging Cross-Sectional Technologies | 1 | Active |
| US9590046B2 | Monocrystalline SiC substrate with a non-homogeneous lattice plane course | Emerging Cross-Sectional Technologies | 0 | Active |
| US9376764B2 | Physical vapor transport growth system for simultaneously growing more than one SiC single crystal and method of growing | Chemistry; Metallurgy | 0 | Active |
| US8758510B2 | Production method for an SiC volume monocrystal with a non-homogeneous lattice plane course and a monocrystalline SiC substrate with a non-homogeneous lattice plane course | Emerging Cross-Sectional Technologies | 0 | Active |
| US8303924B2 | Production method for a low-dislocation bulk AlN single crystal and low-dislocation monocrystalline AlN substrate | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.