Method of detecting the circular uniformity of the semiconductor circular contact holes
US8865482B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 15, 2013 |
| Grant date | Oct 21, 2014 |
| Priority date | — |
| Expiry date | Oct 15, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/912
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of detecting the circular uniformity of semiconductor circular contact holes. Several detection circuit structures are disposed on the semiconductor wafer: N-type active regions and P-type active regions; silicon dioxide layers separate the N-type active regions from the P-type active regions; the N-type active regions are formed in the P well and the P-type active regions are formed in the N well; polysilicon gates bridge the N-type active regions and the P-type active regions; gate oxide layers insulate the P-type regions and the N-type regions from the polysilicon gates, so that the P-type regions and the N-type regions are independent; the N-type active regions connect with circular contact holes while the P-type active regions and the polysilicon gates connect with oval contact holes; a electron beam scanner detects the circular uniformity of the contact holes. This invention advantageously reflects effectively and comprehensively the circular uniformity of the contact holes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.