Formation of liner and barrier for tungsten as gate electrode and as contact plug to reduce resistance and enhance device performance
US8865594B2 · kind B2 · utility
9Cited by
4References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2012 |
| Grant date | Oct 21, 2014 |
| Priority date | — |
| Expiry date | Jul 12, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/488
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention provides a method of forming a film stack on a substrate, comprising performing a silicon containing gas soak process to form a silicon containing layer over the substrate, reacting with the silicon containing layer to form a tungsten silicide layer on the substrate, depositing a tungsten nitride layer on the substrate, subjecting the substrate to a nitridation treatment using active nitrogen species from a remote plasma, and depositing a conductive bulk layer directly on the tungsten nitride layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.