Low micropipe 100 mm silicon carbide wafer
US8866159B1 · kind B1 · utility
6Cited by
22References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 22, 2013 |
| Grant date | Oct 21, 2014 |
| Priority date | — |
| Expiry date | Nov 22, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/40
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 100 mm and a micropipe density of less than about 25 cm−2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.