Magnetic stacks with perpendicular magnetic anisotropy for spin momentum transfer magnetoresistive random access memory
US8866207B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 4, 2012 |
| Grant date | Oct 21, 2014 |
| Priority date | — |
| Expiry date | Jan 12, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic tunnel junction (MTJ) includes a magnetic free layer, having a variable magnetization direction; an insulating tunnel barrier located adjacent to the free layer; a magnetic fixed layer having an invariable magnetization direction, the fixed layer disposed adjacent the tunnel barrier such that the tunnel barrier is located between the free layer and the fixed layer, wherein the free layer and the fixed layer have perpendicular magnetic anisotropy; and one or more of: a composite fixed layer, the composite fixed layer comprising a dusting layer, a spacer layer, and a reference layer; a synthetic antiferromagnetic (SAF) fixed layer structure, the SAF fixed layer structure comprising a SAF spacer located between the fixed layer and a second fixed magnetic layer; and a dipole layer, wherein the free layer is located between the dipole layer and the tunnel barrier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.