Semiconductor device manufacturing method, substrate processing apparatus and semiconductor device
US8866271B2 · kind B2 · utility
4Cited by
5References
9Claims
0Family size
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Key dates
| Filing date | Sep 30, 2011 |
| Grant date | Oct 21, 2014 |
| Priority date | — |
| Expiry date | Sep 30, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device manufacturing method includes loading a substrate, on which a high-k film is formed, into a processing chamber, performing a reforming process by heating the high-k film through irradiation of a microwave on the substrate, and unloading the substrate from the processing chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.