Semiconductor chip device with polymeric filler trench
US8866276B2 · kind B2 · utility
9Cited by
4References
20Claims
0Family size
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Inventors
Key dates
| Filing date | Dec 18, 2013 |
| Grant date | Oct 21, 2014 |
| Priority date | — |
| Expiry date | Dec 18, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/167
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing is provided that includes providing a semiconductor chip with an insulating layer. The insulating layer includes a trench. A second semiconductor chip is stacked on the first semiconductor chip to leave a gap. A polymeric filler is placed in the gap wherein a portion of the polymeric filler is drawn into the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.