Backside processing of semiconductor devices

US8866299B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Mark Harrison · Wernberg, AT
• Evelyn Napetschnig · Diex, AT
• Franz Stueckler · Friesach, AT

Key dates

• Filing date: Jul 1, 2013
• Grant date: Oct 21, 2014
• Expiry date: Jul 1, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/1461
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device includes a workpiece having a bottom surface opposite the top surface. Metallization layers are disposed over the top surface and a protective layer is disposed over the metallization layers. The semiconductor device further includes a metal silicide layer disposed on the bottom surface. The metal silicide layer is less than about five atomic layers in thickness. A first metal layer is disposed over the metal silicide layer such that a metal of the first metal layer is the same as a metal of the metal silicide layer.