Patent · US Active

Methods of forming bonded semiconductor structures

US8866305B2 · kind B2 · utility

9Cited by

3References

21Claims

0Family size

Assignee

SOITEC · FR

Inventors

Mariam Sadaka · Austin, US
Ionut Radu · Crolles, FR

Key dates

Filing date	Jul 9, 2013
Grant date	Oct 21, 2014
Priority date	—
Expiry date	Jul 9, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/14
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Methods of forming bonded semiconductor structures include temporarily, directly bonding together semiconductor structures, thinning at least one of the semiconductor structures, and subsequently permanently bonding the thinned semiconductor structure to another semiconductor structure. The temporary, direct bond may be established without the use of an adhesive. Bonded semiconductor structures are fabricated in accordance with such methods.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.