Method for producing hybrid components

US8871607B2 · kind B2 · utility

Assignees

• S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES · FR
• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Thomas Signamarcheix · Grenoble, FR
• Franck Fournel · Meylan, FR
• Hubert Moriceau · Saint-Égrève, FR

Key dates

• Filing date: Jun 6, 2008
• Grant date: Oct 28, 2014
• Expiry date: Jun 4, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/01
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for producing a hybrid substrate, including a support substrate, a continuous buried insulator layer and, on this continuous layer, a hybrid layer including alternating zones of a first material and at least one second material, wherein these two materials are different by their nature and/or their crystallographic characteristics. The method forms a hybrid layer, including alternating zones of first and second materials, on a homogeneous substrate, assembles this hybrid layer, the continuous insulator layer and the support substrate, and eliminates a part at least of the homogeneous substrate, before or after the assembling.