Integrated structure for MEMS device and semiconductor device and method of fabricating the same
US8872287B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2008 |
| Grant date | Oct 28, 2014 |
| Priority date | — |
| Expiry date | Oct 27, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present invention relates to an integrated structure for a MEMS device and a semiconductor device and a method of fabricating the same, in which an etch stopping element is included on a substrate between the MEMS device and the semiconductor device for protecting the semiconductor device from lateral damage when an oxide releasing process is performed to fabricate the MEMS device. The etch stopping element has various profiles and is selectively formed by an individual fabricating process or is simultaneously formed with the semiconductor device in the same fabricating process. It is a singular structure or a combined stacked multilayered structure, for example, a plurality of rows of pillared etch-resistant material plugs, one or a plurality of wall-shaped etch-resistant material plugs, or a multilayered structure of a stack of which and an etch-resistant material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.