Semiconductor device and a method of manufacture therefor
US8872311B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2004 |
| Grant date | Oct 28, 2014 |
| Priority date | — |
| Expiry date | May 16, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0227
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a semiconductor device, a method of manufacture therefor, and an integrated circuit including the semiconductor device. The semiconductor device, in one particularly advantageous embodiment, includes a multi layer etch stop located over a substrate, wherein the multi layer etch stop has a first insulative layer and a second silicon-rich nitride layer located over the first insulative layer. Located over the multi layer etch stop is a dielectric layer having an opening formed therein that extends through at least a portion of the multi layer etch stop. A conductive plug is typically located within the opening, wherein an insulative spacer is located between the conductive plug and the second silicon-rich nitride layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.