Electronic device and method of fabricating an electronic device

US8872315B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Khalil Hosseini · Weihmichl, DE
• Joachim Mahler · Regensburg, DE
• Ivan Nikitin · Regensburg, DE
• Gottfried Beer · Nittendorf, DE

Key dates

• Filing date: Aug 9, 2012
• Grant date: Oct 28, 2014
• Expiry date: Aug 21, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/15787
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device includes an electrically conducting carrier and a semiconductor chip disposed over the carrier. The semiconductor device also includes a porous diffusion solder layer provided between the carrier and the semiconductor chip.