Methods of manufacturing semiconductor devices
US8877579B2 · kind B2 · utility
2Cited by
34References
4Claims
0Family size
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Key dates
| Filing date | Mar 12, 2012 |
| Grant date | Nov 4, 2014 |
| Priority date | — |
| Expiry date | Aug 23, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0167
Abstract
Methods of manufacturing semiconductor devices include providing a substrate including a NMOS region and a PMOS region, implanting fluorine ions into an upper surface of the substrate, forming a first gate electrode of the NMOS region and a second gate electrode of the PMOS region on the substrate, forming a source region and a drain region in portions of the substrate, which are adjacent to two lateral surfaces of the first gate electrode and the second gate electrode, respectively, and performing a high-pressure heat-treatment process on an upper surface of the substrate by using non-oxidizing gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.