CMOS device for reducing radiation-induced charge collection and method for fabricating the same

US8877594B2 · kind B2 · utility

Assignee

• Peking University · CN

Inventors

• Ru Huang · Beijing, CN
• Fei Tan · Santa Clara, US
• Xia An · Beijing, CN
• Qianqian Huang · Beijing, CN
• Dong Yang · Beijing, CN
• Xing Zhang · Hefei, CN

Key dates

• Filing date: Nov 30, 2011
• Grant date: Nov 4, 2014
• Expiry date: Jul 18, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/601

Abstract

A CMOS device for reducing a radiation-induced charge collection and a method for fabricating the same. In the CMOS device, a heavily doped charge collection-suppressed region is disposed directly under the source region and the drain region. The region has a doping type opposite that of the source region and the drain region, and has a doping concentration not less than that of the source region and the drain region. The charge collection-suppressed region has a lateral part slightly less than or equal to that of the source region and the drain region, and has a lateral range toward to the channel not exceed the edges of the source region and the drain region. The CMOS device may greatly reduce a range of the funnel that appears under the action of a single particle, so that charges collected instantaneously under a force of an electric field may be reduced.