Inventor · Beijing, CN

Dong Yang

10Patents
1h-index
11Co-inventors
51Inventor score

Filing activity: Sep 15, 1998 → Apr 15, 2019

Most-cited inventions

PatentTitleAreaCited byStatus
US9086448B2 Method for predicting reliable lifetime of SOI mosfet device Physics 1 Active
US11315706B2 Downhole cable and method of making a downhole cable Emerging Cross-Sectional Technologies 0 Active
US9679677B2 Cable Emerging Cross-Sectional Technologies 0 Active
US11158442B2 Manufacturing techniques for a jacketed metal line Performing Operations; Transporting 0 Active
US10262770B2 Method of making a cable Emerging Cross-Sectional Technologies 0 Active
US7227269B2 Wiring structure for a pad section in a semiconductor device Electricity 0 Expired
US6011750A Semiconductor device having address transition detecting circuit Physics 0 Expired
US8652929B2 CMOS device for reducing charge sharing effect and fabrication method thereof Electricity 0 Active
US8877594B2 CMOS device for reducing radiation-induced charge collection and method for fabricating the same Electricity 0 Active
US10037836B2 Slickline manufacturing techniques Performing Operations; Transporting 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.