Methods of forming semiconductor devices with different insulation thickness on the same semiconductor substrate and the resulting devices
US8877625B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | May 14, 2013 |
| Grant date | Nov 4, 2014 |
| Priority date | — |
| Expiry date | May 14, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
Abstract
One method includes forming first and second devices by forming a first layer of gate insulation material having a first thickness for the first device, forming a layer of high-k insulation material having a second thickness that is less than the first thickness for the second device and forming first and second metal-containing gate electrode structures that contact the first layer of gate insulation material and the high-k insulation material. A device disclosed herein includes first and second semiconductor devices wherein the first gate structure comprises a layer of insulating material having a first portion of a first metal layer positioned on and in contact with the layer of insulating material and a second gate structure comprised of a layer of high-k insulation material and a second portion of the first metal layer positioned on and in contact with the layer of high-k insulation material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.