Jun Lian
5Patents
2h-index
11Co-inventors
40Inventor score
Filing activity: May 14, 2013 → Jun 11, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8877625B1 | Methods of forming semiconductor devices with different insulation thickness on the same semiconductor substrate and the resulting devices | Electricity | 11 | Active |
| US9312145B2 | Conformal nitridation of one or more fin-type transistor layers | Electricity | 2 | Active |
| US9698269B2 | Conformal nitridation of one or more fin-type transistor layers | Electricity | 1 | Active |
| US11222844B2 | Via structures for use in semiconductor devices | Electricity | 0 | Active |
| US9993667B2 | Descent control device | Mechanical Engineering; Lighting; Heating | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.