Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US8877655B2 · kind B2 · utility
529Cited by
135References
25Claims
0Family size
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Key dates
| Filing date | May 6, 2011 |
| Grant date | Nov 4, 2014 |
| Priority date | — |
| Expiry date | Aug 7, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to a process and system for depositing a thin film onto a substrate. One aspect of the invention is depositing a thin film metal oxide layer using atomic layer deposition (ALD).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.