Electrical bypass structure for MEMS device
US8878312B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 1, 2011 |
| Grant date | Nov 4, 2014 |
| Priority date | — |
| Expiry date | Jan 12, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49126
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
An apparatus including a bypass structure for complementary metal-oxide-semiconductor (CMOS) and/or microelectromechanical system (MEMS) devices, and method for fabricating such apparatus, is disclosed. An exemplary apparatus includes a first substrate; a second substrate that includes a MEMS device; an insulator disposed between the first substrate and the second substrate; and an electrical bypass structure disposed in the insulator layer that contacts a portion of the first substrate, wherein the electrical bypass structure is electrically isolated from the MEMS device in the second substrate and any device included in the first substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.