Patent · US Active

Stacked fan-out semiconductor chip

US8878360B2 · kind B2 · utility

58Cited by

3References

10Claims

0Family size

Assignee

Intel Mobile Communications GmbH · DE

Inventors

Thorsten Meyer · Regensburg, DE
Gerald Ofner · Regensburg, DE
Sven Albers · Regensburg, DE

Key dates

Filing date	Jul 13, 2012
Grant date	Nov 4, 2014
Priority date	—
Expiry date	Jul 13, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/19105
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A stacked semiconductor device and method of manufacturing a stacked semiconductor device are described. The semiconductor device may include a reconstituted base layer having a plurality of embedded semiconductor chips. A first redistribution layer may contact the electrically conductive contacts of the embedded chips and extend beyond the boundary of one or more of the embedded chips, forming a fan-out area. Another chip may be stacked above the chips embedded in the base layer and be electrically connected to the embedded chips by a second redistribution layer. Additional layers of chips may be included in the semiconductor device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.