Substrate processing including correction for deposition location
US8882917B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 31, 2009 |
| Grant date | Nov 11, 2014 |
| Priority date | — |
| Expiry date | May 3, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG05B2219/45031
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Substrate processing including correction for deposition location is described, including a combinatorial processing chamber that incorporates the correction. The combinatorial processing chamber can be used to process multiple regions of a substrate using different processing parameters on different regions. For example, one region can have one material deposited on it and another region can have a different material deposited on it, although other combinations and variations are possible. The combinatorial processing chamber uses a rotating and revolving substrate pedestal to be able to deposit on all locations or positions on a substrate. The combinatorial processing chamber uses a correction factor that accounts for variations in alignment and/or configuration of the processing chamber so that the actual location of deposition of a region is approximately the same as a desired location of deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.