Systems and methods for thin-film deposition of metal oxides using excited nitrogen—oxygen species
US8883270B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 11, 2010 |
| Grant date | Nov 11, 2014 |
| Priority date | — |
| Expiry date | Jun 1, 2031 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01B2201/64
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Systems and methods are delineated which, among other things, are for depositing a film on a substrate that is within a reaction chamber. In an exemplary method, the method may comprise applying an atomic layer deposition cycle to the substrate, wherein the cycle may comprise exposing the substrate to a precursor gas for a precursor pulse interval and then removing the precursor gas thereafter, and exposing the substrate to an oxidizer comprising an oxidant gas and a nitrogen-containing species gas for an oxidation pulse interval and then removing the oxidizer thereafter. Aspects of the present invention utilize molecular and excited nitrogen-oxygen radical/ionic species in possible further combination with oxidizers such as ozone. Embodiments of the present invention also include electronic components and systems that include devices fabricated with methods consistent with the present invention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.