Semiconductor device and method of embedding TSV semiconductor die within encapsulant with TMV for vertical interconnect in POP
US8883561B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 30, 2011 |
| Grant date | Nov 11, 2014 |
| Priority date | — |
| Expiry date | Jul 25, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K1/185
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a carrier or first conductive layer with a plurality of TSV semiconductor die mounted over the carrier or first conductive layer. An encapsulant is deposited around the first semiconductor die and over the carrier or first conductive layer to embed the first semiconductor die. A conductive TMV is formed through the encapsulant. A second conductive layer is formed over a first surface of the encapsulant. A first insulating layer is formed over the first surface of the encapsulant while exposing portions of the second conductive layer. A second insulating layer is formed over the second surface of the encapsulant while exposing portions of the first conductive layer. Alternatively, a first interconnect structure is formed over the first surface of the encapsulant. The carrier is removed and a second interconnect structure is formed over a second surface of the encapsulant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.