Silver deposition method for a non-volatile memory device
US8883603B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 1, 2012 |
| Grant date | Nov 11, 2014 |
| Priority date | — |
| Expiry date | Aug 1, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/883
Abstract
A method for forming a silver structure for a non-volatile memory device includes providing a silver layer material upon a underlying substrate, forming a diffusion barrier material overlying the silver layer material, forming a dielectric hard mask material overlying the diffusion barrier material, subjecting the dielectric hard mask material to a patterning and etching process to form a hard mask and to expose a portion of the diffusion barrier material, subjecting the portion of the diffusion barrier material to an etching process using one or more chlorine bearing species as an etchant material, wherein one or more chloride contaminant species is formed overlying at least a portion of the silver layer material, and reacting the one or more chloride contaminant species with a solution comprising an ammonia species to form a water soluble species, wherein the ammonia species is free from an oxidizing species.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.