Inventor · Sunnyvale, CA, US

Steven Patrick Maxwell

18Patents
7h-index
9Co-inventors
51Inventor score

Filing activity: Apr 13, 2012 → May 5, 2017

Most-cited inventions

PatentTitleAreaCited byStatus
US8946667B1 Barrier structure for a silver based RRAM and method Electricity 24 Active
US9166163B2 Sub-oxide interface layer for two-terminal memory Electricity 23 Active
US9595670B1 Resistive random access memory (RRAM) cell and method for forming the RRAM cell Electricity 17 Active
US9583701B1 Methods for fabricating resistive memory device switching material using ion implantation Electricity 8 Active
US9412790B1 Scalable RRAM device architecture for a non-volatile memory device and method Electricity 8 Active
US9685608B2 Reduced diffusion in metal electrode for two-terminal memory Physics 7 Active
US8883603B1 Silver deposition method for a non-volatile memory device Electricity 7 Active
US9425046B1 Method for surface roughness reduction after silicon germanium thin film deposition Electricity 5 Active
US9437814B1 Mitigating damage from a chemical mechanical planarization process Electricity 5 Active
US9269898B2 Low temperature deposition for silicon-based conductive film Electricity 3 Active
US10910561B1 Reduced diffusion in metal electrode for two-terminal memory Physics 2 Active
US9601690B1 Sub-oxide interface layer for two-terminal memory Electricity 1 Active
US9401475B1 Method for silver deposition for a non-volatile memory device Electricity 0 Active
US10192927B1 Semiconductor device for a non-volatile (NV) resistive memory and array structure for an array of NV resistive memory Electricity 0 Active
US10115819B2 Recessed high voltage metal oxide semiconductor transistor for RRAM cell Electricity 0 Active
US9312483B2 Electrode structure for a non-volatile memory device and method Electricity 0 Active
US8889521B1 Method for silver deposition for a non-volatile memory device Electricity 0 Active
US8765566B2 Line and space architecture for a non-volatile memory device Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.