Patent · US Active

Microstructure device including a metallization structure with self-aligned air gaps between closely spaced metal lines

US8883610B2 · kind B2 · utility

6Cited by

4References

11Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Robert Seidel · Dresden, DE
Markus Nopper · Dresden, DE
Axel Preusse · Radebeul, DE

Key dates

Filing date	Oct 23, 2009
Grant date	Nov 11, 2014
Priority date	—
Expiry date	May 28, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In sophisticated metallization systems, air gaps may be formed on the basis of a self-aligned patterning regime during which the conductive cap material of metal lines may be protected by providing one or more materials, which may subsequently be removed. Consequently, the etch behavior and the electrical characteristics of metal lines during the self-aligned patterning regime may be individually adjusted.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.