Systems and methods for controlling etch selectivity of various materials
US8883637B2 · kind B2 · utility
20Cited by
11References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 28, 2012 |
| Grant date | Nov 11, 2014 |
| Priority date | — |
| Expiry date | Jun 28, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76879
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for filling a recessed feature of a substrate includes a) at least partially filling a recessed feature of a substrate with tungsten-containing film using at least one of chemical vapor deposition (CVD) and atomic layer deposition (ALD); b) at a predetermined temperature, using an etchant including activated fluorine species to selectively etch the tungsten-containing film more than an underlying material of the recessed feature without removing all of the tungsten-containing film at a bottom of the recessed feature; and c) filling the recessed feature using at least one of CVD and ALD.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.