Heating plate with planar heater zones for semiconductor processing
US8884194B2 · kind B2 · utility
48Cited by
69References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 10, 2013 |
| Grant date | Nov 11, 2014 |
| Priority date | — |
| Expiry date | Dec 10, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49099
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A heating plate of a semiconductor substrate support for supporting a semiconductor substrate in a plasma processing chamber includes a first layer with an array of heater zones operable to tune a spatial temperature profile on the semiconductor substrate, and a second layer with one or more primary heaters to provide mean temperature control of the semiconductor substrate. The heating plate can be incorporated in a substrate support wherein a switching device independently supplies power to each one of the heater zones to provide time-averaged power to each of the heater zones by time divisional multiplexing of the switches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.