Patent · US Active

Semiconductor device with a passivation layer

US8884342B2 · kind B2 · utility

2Cited by

3References

30Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Gerhard Schmidt · Graz, AT
Josef Bauer · Munich, DE
Carsten Schaeffer · Annenheim, AT
Oliver Humbel · Maria Elend, AT
Angelika Koprowski · Klagenfurt, AT
Sirinpa Monayakul · Villach, AT

Key dates

Filing date	Aug 29, 2012
Grant date	Nov 11, 2014
Priority date	—
Expiry date	Oct 20, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/112
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a semiconductor body with a first surface, a contact electrode arranged on the first surface, and a passivation layer on the first surface adjacent the contact electrode. The passivation layer includes a layer stack with an amorphous semi-insulating layer on the first surface, a first nitride layer on the amorphous semi-insulating layer, and a second nitride layer on the first nitride layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.