Anti-fuse structure and programming method thereof
US8884398B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 1, 2013 |
| Grant date | Nov 11, 2014 |
| Priority date | — |
| Expiry date | Apr 1, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13091
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of programming an anti-fuse includes steps as follows. First, an insulating layer is provided. An anti-fuse region is defined on the insulating layer. An anti-fuse is embedded within the anti-fuse region of the insulating layer. The anti-fuse includes at least a first conductor and a second conductor. Then, part of the insulating layer is removed by a laser to form an anti-fuse opening in the insulating layer. Part of the first conductor and part of the second conductor are exposed through the anti-fuse opening. After that, a under bump metallurgy layer is formed in the anti-fuse opening to connect the first conductor and the second conductor electrically.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.