Patent · US Active

Method for producing a semiconductor component with a through-contact and semiconductor component with through-contact

US8884442B2 · kind B2 · utility

0Cited by

4References

4Claims

0Family size

Assignee

AMS AG · AT

Inventors

Jochen Kraft · Bruck an der Mur, AT
Stefan Jessenig · Graz, AT
Günther Koppitsch · Lieboch, AT
Franz Schrank · Graz, AT
Jordi Teva · Eindhoven, NL
Bernhard Löffler · Gleisdorf, AT
Jörg Siegert · Eindhoven, NL

Key dates

Filing date	Aug 9, 2011
Grant date	Nov 11, 2014
Priority date	—
Expiry date	Aug 9, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Through the intermetal dielectric (2) and the semiconductor material of the substrate (1) a contact hole is formed, and a contact area of a connection metal plane (3) that faces the substrate is exposed in the contact hole. A metallization (11) is applied, which forms a connection contact (12) on the contact area, a through-contact (13) in the contact hole and a connection contact (20) on a contact area facing away from the substrate and/or on a vertical conductive connection (15) of the upper metal plane (24).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.