Mask pattern and correcting method thereof
US8885917B2 · kind B2 · utility
1Cited by
11References
11Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 27, 2011 |
| Grant date | Nov 11, 2014 |
| Priority date | — |
| Expiry date | Sep 17, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A mask pattern and a correcting method thereof are provided. The correcting method includes the following steps. An original pattern having a first original contour and a second original contour is provided. The first original contour has a first original corner. The second original contour has a second original corner, which is near the first original corner. The first and second original corners are cut to form a cut pattern. An optical proximity correction (OPC) process is applied to the cut pattern to form the mask pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.